GaN-on-Sapphire HEMT Power IC by Power Integrations Report 2019: Estimation of the Production Costs of the ICs, the HEMT and the Package - ResearchAndMarkets.com September 04, 2019 09:15 AM ...

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering.The report proposes an in ...

DUBLIN, Sept. 4, 2019 /PRNewswire/ -- The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering.. The report provides an estimation of ...

ST has begun volume production of e-mode PowerGaN HEMT devices that simplify the design of high-efficiency power-conversion systems. The STPOWER GaN transistors raise performance in applications such ...

Fujitsu Laboratories has developed a gallium ntride RF power amplifier, claiming it to “deliver the world’s highest output power of 320W at 57% efficiency of power conversion”. The HEMT (high electron ...

Accelerating development towards the mass production of GaN devices for automotive applications ROHM's New GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless Package Compact design features excellent ...

Taiwan's epi-wafer supplier Intelligent Epitaxy Technology (IntelliEPI) has started taking orders for its high-performance GaN-based HEMT products, which are expected to serve as another growth ...

A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...