However, in the experimental results of the fabricated LDs using InGaN QB layers in comparison with those with GaN QB layers, the slope efficiency is really improved greatly, which is 34% higher. The ...

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...

THz emission spectroscopy reveals optical response of GaInN/GaN multiple quantum wells. ScienceDaily . Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2021 / 05 / 210510104336.htm ...

InGaN/GaN quantum wells with sub-nanometer thickness and high indium content that are promising for bandgap engineering of efficient optoelectronic devices as well as for exploiting novel topological ...