C LOAD represents the gate capacitance of the MOSFET, and; R DS(on)UP is the pull-up on resistance. In general, to keep the power budget low, fast switching is desired. On the other hand, in most ...

These two parameters are dependant on the miller capacitance, which is usually represented by Gate-Drain charge (Qgd) where a lower Qgd will result in faster the MOSFET switching. The switching losses ...

MOSFET synchronous converter input capacitance affects performance. John W. Worman, Fairchild Semiconductor, Mountaintop, Pa. The switching speed of a power MOSFET charge-controlled device depends ...

The voltage across the capacitor pretending to be the mosfet gate capacitance is not getting close enough to the oV rail (see black rectangle below left) to turn off the mosfet properly – my ...

If the impedance is too high, the gate driver can’t supply sufficient current to charge and discharge the gate capacitance of the SiC MOSFET quickly, even with high-current devices like the ...

May 26, 2020: The negative-capacitance transistor - Building an ideal MOSFET (Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

Australian researchers have discovered that negative capacitance could lower the energy used in electronics and computing, which represents 8% of global electricity demand. The researchers showed ...

Couldn’t resist simulating the possible Cuk synchronous rectifier mosfet drive circuit. And the results are not good (but scroll down for a better circuit:) The voltage across the capacitor pretending ...