For example, when phosphorus atoms are implanted to replace the silicon atoms for n-doping, the result in n-type silicon. Similarly, when boron atoms are employed for p-doping, p-type silicon is ...

Researchers at the University of California, Riverside have unlocked a hidden power within silicon, the backbone of modern electronics. Their findings could transform how future devices are built, ...

Using lasers to dope silicon is faster, cleaner, and more precise than traditional methods. It’s a glimpse into how high-tech manufacturing keeps pushing the limits of what chips can do.

Electrons can travel through silicon as waves, paving the way for smaller and more advanced devices. Scientists at the, Riverside, have discovered a method to control how electricity moves through ...

The research team led by Professor Jun He from Wuhan University has developed a universal metal-assisted epitaxy strategy to produce wafer-scale monolayer MoS2 films with specific substitutional ...

All-inorganic perovskite materials exhibit exceptional thermal stability and promising candidates for tandem devices, while ...

It can be seen that the minority carrier lifetime of gallium-doped silicon wafers basically maintains a constant value of about 300μs after 104s light exposure, while those of boron-doped and ...

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit. Applied Physics Letters , 2022; 121 (5): 052103 DOI: 10.1063/5.0099083 ...

The Limiting Factor describes how battery design improvements, assymetric lamination and adding silicon doping can increase the energy density of Tesla 4680 batteries by about 20% over the next two ...