In the example below, the complete surface of a 150 mm (6 inch) silicon carbide (SiC) wafer was imaged with Raman microscopy using a 532 nm laser for excitation. The analysis revealed non-uniform ...

Doping is the process of adding impurities to silicon wafers in a controlled manner to alter the electrical properties of the semiconductor. [Zach]’s doping method is a more localized version of ...

Confocal 3D Raman volume image of a pharmaceutical emulsion: The oil phase (green) is partially removed in the image for better visibility of the silicon impurities (red) in the water and API ...

Raman spectroscopy, particularly when enhanced ... The microfluidic device was fabricated using polydimethylsiloxane (PDMS). A silicon wafer was coated with photoresist, exposed to UV light ...