A research team affiliated with UNIST announced the successful development of a novel semiconductor device that uses a new ...

Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other ...

Magnetic tunnel junctions (MTJs) have played a central role in spintronic devices, and researchers are working to improve their performance. A prominent achievement that accelerated the technology ...

A research group has developed the world's smallest (2.3 nm) high-performance magnetic tunnel junctions (MTJs). This work is expected to accelerate the advancement of ultrahigh-density, low-power ...

More information: Junta Igarashi et al, Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities, npj Spintronics (2024). DOI: 10.1038/s44306-023-00003-2 ...

Advanced ferromagnetic tunnel junction using two-dimensional hexagonal-BN. Tohoku University. Journal Applied Physics Reviews DOI 10.1063/5.0049792 ...

A research group has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions can be achieved by engineering relaxation time. The new technology is expected to ...