iDEAL Semiconductor announced its 150-V and 200-V SuperQ MOSFETs that improve conventional silicon designs and rival even WBG materials.

This video showcases a high-efficiency 60W flyback converter from Power Integrations, delivering two independent outputs—5V and 24V—using the InnoMux2-EP IC.

The Vermont Gallium Nitride (V-GaN) Tech Hub has secured $3.4 million in funding from the Northeast Microelectronics Coalition (NEMC) to establish a new microelectronics testing laboratory in South ...

Power Integrations has announced the appointment of Jennifer A. Lloyd, PhD, as the company’s next chief executive officer, succeeding Balu Balakrishnan, who has held the CEO position since 2002. Dr.

Due to the high energy density of hydrogen, fuel cells allow longer flights with heavier payloads than battery technology.

Efficient Power Conversion Corporation (EPC) has unveiled the EPC91118, marking the industry’s first commercially available reference design that incorporates gallium nitride (GaN) integrated circuit ...

In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on GaN-Based Motor Drive, Ultra-Low Power System Design, and Circular Energy Storage!

Dr. Milan Rosina, principal analyst for Power Electronics and Batteries at Yole Développement (Yole), said that EV charging requires much higher voltage, power, and amount of energy transferred.

Learn About Class D Power Amplifier Circuit Design (with Diagrams), Schematics, and Efficiency. Plus, See How It Compares to an AB Amp. Visit Today!

Compared to silicon, GaN allows to obtain important improvements, such as greater energy efficiency, smaller dimensions, lower weight, and lower overall cost.

Achieving sustainability in semiconductor manufacturing paves the way for an eco-friendlier technology sector.