1/E model is found more appropriate for gate oxide time dependence dielectric breakdown (TDDB) lifetime prediction in CMOS with 6.7 nm SiO<inf>2</inf> and poly electrode of 3D NAND technology, instead ...

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This paper presents a physics based, computationally efficient compact modeling approach for 3D vertical gate-all-around junctionless nanowire transistor (JLNT) arrays designed for future high ...