The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

GaN-on-Sapphire HEMT Power IC by Power Integrations Report 2019: Estimation of the Production Costs of the ICs, the HEMT and the Package - ResearchAndMarkets.com September 04, 2019 09:15 AM ...

ROHM began mass production of its 1 st generation 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package.

AmpliTech Group Powers The Quantum Computing Revolution With Cutting-Edge Low-Noise Cryogenic HEMT Amplifiers. AmpliTech Group, Inc. Wed, Dec 11, 2024, 8:30 AM 4 min read. In This Article: ...

ST has begun volume production of e-mode PowerGaN HEMT devices that simplify the design of high-efficiency power-conversion systems. The STPOWER GaN transistors raise performance in applications such ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering.The report proposes an in ...

DUBLIN, Sept. 4, 2019 /PRNewswire/ -- The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering.. The report provides an estimation of ...

A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...

650V E-mode GaN HEMT ICs Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join ...