The company is expanding its “GaN ecosystem” with a new family of 650-V GaN power FETs, which feature a silicon-compatible ...

Graphene market growth is set to soar from $694.4M in 2025 to $2.3B by 2030. Key in electronics, energy, and healthcare, ...

China’s indium selenide wafer breakthrough marks a leap beyond silicon. It won’t upend the chip industry overnight, but ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron ...

High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to ...

TSMC 3nm process node is the best FinFET technology and TSMC dominates semiconductor chip fabrication with higher transistor ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Using an advanced Monte Carlo method, Caltech researchers found a way to tame the infinite complexity of Feynman diagrams and solve the long-standing polaron problem, unlocking deeper understanding of ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Bacterial cell division, a process wherein a single cell divides to form two identical daughter cells, represents one of the ...

The federal funds will enable development of high-performance, reliable electronic devices that can improve high-power systems for defense, radar and communications.