It can be seen that the minority carrier lifetime of gallium-doped silicon wafers basically maintains a constant value of about 300μs after 104s light exposure, while those of boron-doped and ...

BEIJING, Oct. 10, 2019 /PRNewswire/ -- JA Solar has reached agreement with Shin-Etsu Chemical of Japan to license its intellectual properties of using Ga-doped silicon wafers for solar cell ...

Scientists from Trina Solar, Longi, Fraunhofer ISE, and other entities have looked at light and elevated temperature-induced degradation (LeTID) in gallium-doped Czochralski silicon (Cz-Si:Ga ...

Electrons travel about five times faster in gallium arsenide than they do in silicon. Gallium arsenide also has a high resistance to electrical current before it is doped with a Since the early 1970s, ...

Scientists from Trina Solar, Longi, Fraunhofer ISE, and other entities have looked at light and elevated temperature-induced degradation (LeTID) in gallium-doped Czochralski silicon (Cz-Si:Ga ...

Gallium phosphide (GaP) is a semiconductor material that has garnered significant interest for its potential applications in optoelectronics and photovoltaics. The growth of GaP on silicon (Si ...

New high-power electronic devices have been developed by engineers that are significantly more energy efficient than previous technology. A new technique for carefully “doping” gallium nitride (GaN) ...

Top: In memristive elements (ECMs) with an undoped, high-purity switching layer of silicon oxide (SiO2), copper ions can move very fast. A filament of copper atoms forms correspondingly fast on ...

The solar cell used a gallium indium arsenide phosphide (GaInAsP) emitter layer in addition to the GaAs base layer. The heterojunction is formed by the two distinct layers. The effect of altering the ...