The PV device is based on a indium gallium phosphide absorber with an energy bandgap of 1.9 eV. It is intended for use in ...

Ex-CIA Advisor Jim Rickards says key federal provisions may now unlock access to America’s most strategic hidden resource ...

Gallium Phosphide (GaP) epitaxy on silicon substrates represents a critical frontier in semiconductor heterointegration, combining the superior optoelectronic properties of III–V materials with ...

Atomera Incorporated (NASDAQ:ATOM) is one of the 11 Best Semiconductor Penny Stocks to Buy According to Hedge Funds. On July ...

Electrons can travel through silicon as waves, paving the way for smaller and more advanced devices. Scientists at the, Riverside, have discovered a method to control how electricity moves through ...

The research team led by Professor Jun He from Wuhan University has developed a universal metal-assisted epitaxy strategy to produce wafer-scale monolayer MoS2 films with specific substitutional ...

French Olympic fencer Ysaora Thibus was cleared of a doping allegation Monday because the judges accepted she was contaminated by kissing her American partner over a period of nine days. The Court ...

LAUSANNE, Switzerland (AP) — French Olympic fencer Ysaora Thibus was cleared of a doping allegation Monday because the judges accepted she was contaminated by kissing her American partner over a ...

Reuters.com is your online source for the latest Doping news stories and current events, ensuring our readers up to date with any breaking news developments ...

The Center for Strategic and International Studies report shows that China’s control over gallium production poses far ...

Researchers at the University of California, Riverside, discovered how to control electrical flow through crystalline silicon, a material at the core of modern technology.