In this study, we proposed a novel p-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor (HFET). When a selective etching process is used to precisely etch the p-GaN layer of a conventional p ...

To address these challenges, we introduced a unique unsupervised super-resolution framework named R2D2-GAN. This framework utilizes a generative adversarial network (GAN) to efficiently merge the two ...

Recent supply chain rumors have indicated that TSMC will withdraw from the gallium nitride (GaN) market, a third-generation semiconductor material, with related production lines at its Hsinchu ...