Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and ...

The band gap is a crucial property of semiconductors that significantly impacts their use in various devices, including solar cells, transistors, and photocatalysts.

Narrow band gap perovskites have achieved device efficiencies of up to 26.1% 1. Additionally, wide band gap (WBG) perovskites are showing significant progress in the development of tandem perovskite ...

The development, subject of a paper recently published as the cover story in the journal ACS Nano, hinges on the UC Irvine researchers’ conversion of pure silicon from an indirect to a direct bandgap ...

“In direct bandgap semiconductor materials, electrons transition from the valence band to the conduction band. This process requires only a change in energy; it’s an efficient transfer,” noted lead ...

A study shows photon momentum enables diagonal transitions, converting indirect semiconductors like silicon into direct ones, boosting absorption by 10,000x for solar use.

Photoluminescence properties of the low-dimensional semiconductor nanostructures of materials with indirect electronic band gap are studied theoretically with a ...

UWBG materials like diamond, boron nitride, or gallium oxide, have excellent properties that may result in future products with mind-boggling performances in various fields. In the last years, ...