(14) In this Communication, we demonstrate that electro–ionic defect equilibrium determines the stability of hole and electron carriers in wide band gap semiconductors and that the equilibrium ...

A quantum mechanical procedure to calculate phonon-assisted tunneling current in indirect semiconductors in a two-dimensional structure is demonstrated. Applying the procedure to two types of ...

This study aimed to calculate the band gap energy of a germanium semiconductor diode using computational tools. The energy gap calculation was conducted by immersing the semiconductor diode in an oil ...

These theoretical and experimental results clearly indicate the importance of the band-gap modification, especially in the band-edge regions, in both light harvest and carrier dynamics.