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This paper offers an in-depth analysis of selfheating modeling in $1-\\mathrm{mm}$ GaN-on-SiC high electron mobility transistors (HEMTs). Direct (DC) current-voltage (I-V) and short pulse I-V ...
Two compact WR-1.5 (500–750 GHz) low-noise amplifier (LNA) circuits have been developed, based on miniaturized thin-film microstrip lines (TFMSL) utilizing a 35 nm InGaAs-on-GaAs and a more advanced ...