In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology.

This article summarizes the efforts of a research group from Taiwan in developing 1500 V breakdown voltage (BV) GaN HEMT devices on engineered substrates.

The company is championing the combination of its ‘intelligent’ GaN HEMTs, which feature an enhancement-mode p-GaN HEMT rated at 650 V, and an IGBT. It’s a patent-pending pairing with the moniker ...

The GaN HEMT without a GaN cap layer enhances the saturation behavior, and reduces R on, indicating better channel control and reduced short-channel effects. These improvements are due to enhanced ...

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package.

Oxygen compensation increases the breakdown voltage and reliability of the GaN HEMT, while suppressing its gate leakage current Engineers from China are claiming to have developed a simple, low-cost ...

May 30 (Thu) @ 2:00pm: "High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz," Shigeki Yoshida, Sumitomo Electric Industries, Ltd.

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm ...