The company is expanding its “GaN ecosystem” with a new family of 650-V GaN power FETs, which feature a silicon-compatible ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing ...

Increasing your walking cadence by 14 steps can improve mobility and endurance in older adults, according to a recent study.

Using an advanced Monte Carlo method, Caltech researchers found a way to tame the infinite complexity of Feynman diagrams and solve the long-standing polaron problem, unlocking deeper understanding of ...

In a paper published in Nature Physics, the Caltech team uses its new method to precisely compute the strength of ...

Mobility measurements in highly resistive methylammonium lead iodide (MAPI) are challenging due to high impedance, ion drift, and low mobility. We show that we can address the challenge using ...

Moreover, compared to Si-based components, GaN offers superior electron mobility and thermal characteristics, making a perfect recipe for optimal efficiency and opening new opportunities in the ...

Charge transport in 650-V-rated GaN high electron mobility transistors (HEMTs) was investigated using positive substrate bias up to +600 V. Positive substrate bias resulted in a reduction in channel ...

This study investigates the saturation phenomenon of the drain-induced barrier lowering (DIBL) effect in Schottky-gate gallium nitride (GaN) high-electron-mobility transistors (HEMTs) featuring T-gate ...