Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV. Such structures are of interest because no doped buffer ...

In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs ...

Innovations in assistive AI and, ultimately, increased autonomy with agentic AI will redefine what engineers can achieve ...