In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs ...

Innovations in assistive AI and, ultimately, increased autonomy with agentic AI will redefine what engineers can achieve ...

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...

Infineon Technologies has announced that its scalable GaN manufacturing on 300-millimeter wafers roadmap is on track.

The as-fabricated violet GaN-based light-emitting diodes (LEDs) show high stability and high light output power (LOP). This work provides a general rule for the growth of high-quality and transferable ...