Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type ...

However, in the experimental results of the fabricated LDs using InGaN QB layers in comparison with those with GaN QB layers, the slope efficiency is really improved greatly, which is 34% higher. The ...

InGaN/GaN quantum wells with sub-nanometer thickness and high indium content that are promising for bandgap engineering of efficient optoelectronic devices as well as for exploiting novel topological ...