Complementary field-effect transistor (CFET) is a future transistor type with a high potential to be used beyond 3-nm technology nodes. Despite its high future value, studies related to CFETs mostly ...

Nanosheet FETs (NSFETs) are considered promising candidates to replace FinFETs as the dominant devices in sub-5-nm processes. To encourage further research into NSFET-based integrated circuits, we ...