Abstract: Exploiting the capabilities of multi-gated transistors is a promising strategy for adaptive and compensative analog circuits. Typically, reconfigurable transistors, which can be switched ...

State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PRC Shenzhen R&D ...

NUS scientists have made a standard silicon transistor mimic brain functions, paving the way for efficient, scalable AI hardware using existing chip technology. NUS researchers have shown that a ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Infineon Technologies AG has announced the release of the world’s first industrial-grade gallium nitride (GaN) transistor family featuring an integrated Schottky diode. The new CoolGaN Transistor G5 ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...

A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS ...

Abstract: This work presents a performance optimization and scalability study of a two-dimensional vertical molybdenum ditelluride (MoTe2) phase-change memristor. The device switches between the ...