Electrons can travel through silicon as waves, paving the way for smaller and more advanced devices. Scientists at the, Riverside, have discovered a method to control how electricity moves through ...

The PV device is based on a indium gallium phosphide absorber with an energy bandgap of 1.9 eV. It is intended for use in ...

All-inorganic perovskite materials exhibit exceptional thermal stability and promising candidates for tandem devices, while ...

UC Riverside scientists built a molecular silicon switch that controls electricity using quantum interference instead of miniaturization.

India’s buying of solar photovoltaic (PV) cells from China went up by 141%. This big rise is likely because India is now ...

The research team led by Professor Jun He from Wuhan University has developed a universal metal-assisted epitaxy strategy to produce wafer-scale monolayer MoS2 films with specific substitutional ...

Using lasers to dope silicon is faster, cleaner, and more precise than traditional methods. It’s a glimpse into how high-tech manufacturing keeps pushing the limits of what chips can do.

The Silicon Valley ethos of “move fast and break things” is not a good motto when those things are children’s developing minds. Though again, technically, children under 13 are not supposed ...

No furnaces, no masks—just a fiber laser and phosphoric acid. This is silicon doping, done with precision and speed.

It might be possible to get the best of both worlds using silicon-doped graphite. OneD Battery Sciences, founded in 2013, has developed a catalytic process that grows silicon nanowires inside the ...

Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...

Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...