A research team affiliated with UNIST announced the successful development of a novel semiconductor device that uses a new ...

Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other ...

Magnetic tunnel junctions (MTJs) have played a central role in spintronic devices, and researchers are working to improve their performance. A prominent achievement that accelerated the technology ...

The research is published in npj Unconventional Computing titled "Experimental demonstration of magnetic tunnel junction-based computational random-access memory." The researchers have multiple ...

A research group has developed the world's smallest (2.3 nm) high-performance magnetic tunnel junctions (MTJs). This work is expected to accelerate the advancement of ultrahigh-density, low-power ...

Magnetic tunnel junction device with highest tunnel magnetoresistance developed through precision interfacial control. The National Institute for Materials Science (NIMS) has achieved a tunnel ...

Advanced ferromagnetic tunnel junction using two-dimensional hexagonal-BN. Tohoku University. Journal Applied Physics Reviews DOI 10.1063/5.0049792 ...

A research group has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions can be achieved by engineering relaxation time. The new technology is expected to ...

Researchers in China have observed giant tunnelling magnetoresistance (TMR) in a magnetic tunnel junction made from the antiferromagnet CrSBr. When cooled to a temperature of 5 K, the new structure ...

A new technical paper titled “Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data” was published by researchers at UT Austin and Samsung Advanced ...