In the previous issue we examined a signal generator in Mathematica environment. In real generators, the deformation of the waveform produced must be taken into account.

iDEAL Semiconductor announced its 150-V and 200-V SuperQ MOSFETs that improve conventional silicon designs and rival even WBG materials.

The Vermont Gallium Nitride (V-GaN) Tech Hub has secured $3.4 million in funding from the Northeast Microelectronics Coalition (NEMC) to establish a new microelectronics testing laboratory in South ...

In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

Joseph Bernstein shares his groundbreaking research on using GaN gate drivers to drive SiC transistors at megahertz frequencies.

This year, Bosch took advantage of the PCIM event to assert its ambition to secure a significant position in the SiC market.

At the PCIM show in Nuremberg, Germany, I sat down with Marcus Mosen, CEO of WeEn Semiconductors, to discuss the company’s latest innovations.

At PCIM in Nuremberg, Germany, I sat down with Steven Lee, product manager for power electronics design software at Keysight Technologies. In this insightful interview, Lee shared his views on the ...

Infineon’s Marijana Vukicevic discusses the evolving role of MCUs in high-performance motor control and power conversion applications.

Decentralization of power has only just started, and for electronic engineers, several new challenges and opportunities are on the horizon.

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments.

Extending the application range of GaN power devices to higher voltage and power may necessitate the use of the favored vertical geometry.