In the previous issue we examined a signal generator in Mathematica environment. In real generators, the deformation of the waveform produced must be taken into account.

iDEAL Semiconductor announced its 150-V and 200-V SuperQ MOSFETs that improve conventional silicon designs and rival even WBG materials.

The Vermont Gallium Nitride (V-GaN) Tech Hub has secured $3.4 million in funding from the Northeast Microelectronics Coalition (NEMC) to establish a new microelectronics testing laboratory in South ...

In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...